TI cuts 60-V MOSFET size by 80%

June 21, 2016 // By Nick Flaherty
Texas Instruments (Dallas, TX) has developed a 60-V N-channel power transistor that cuts on-resistance by 90% and reduces size by 80%.

The CSD18541F5 FemtoFET is offered in a 1.53 x 0.77-mm silicon-based Land Grid Array (LGA) package that has an 80% smaller footprint than load switches in SOT-23 packages (shown above). The MOSFET maintains a typical on-resistance (Rds(on)) of 54 mΩ and is designed and optimized to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications. The tiny land grid array (LGA) package features a 0.5-mm pitch between pads for easy mounting.

The 54-mΩ Rds(on) at 10-V gate-to-source (VGS) is 90% less than traditional 60-V load switches, providing lower power loss and an integrated electrostatic discharge (ESD) protection diode safeguards the MOSFET gate from over voltage.

Available in volume now from TI and its authorized distributors, the CSD18541F5 is packaged in a 3-pin LGA package and priced at $0.14 in 1,000-unit quantities.

You can download the  PSpice transient models here  and find more information on FemtoFETs here .

CSD18541F5 60-V N-Channel FemtoFET MOSFET