Toshiba starts building next 3D-NAND wafer fab

February 09, 2017 // By Peter Clarke
Toshiba Corp. has started building a wafer fab for 3D NAND flash memory production and a memory R&D center at its Yokkaichi site in Mie prefecture Japan.

Fab 6 will be dedicated to the production of BiCS flash, Toshiba's version of 3D NAND which it manufactures for partner Western Digital (see Western Digital claims first 64-layer 3D NAND memory ). BiCS stands for bit cost scalable.

Contruction of Fab 6 will take place in two phases with phase 1 scheduled for summer 2018. Toshiba did not provide any estimates of cost or production capacity saying that the installed capacity and output targets would be determined later. The memory R&D center will be adjacent to the Fab 6 shell with completion expected in December 2017. The facility will work on the advancement of BiCS 3D NAND flash and the development of novel memories, presumably of the ReRAM variety.

Related links and articles:

www.toshiba.co.jp

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