High Power Hot Swap with Power Sharing and Digital Telemetry

July 25, 2016 // By Luc Desimpel

Hot Swap circuits are increasingly being used at power levels above 1000W. At these power levels multiple switch MOSFETs are required, but adding MOSFETs does not improve the power dissipation capability of the circuit when the current is regulated because the MOSFETs don’t inherently share current. The LTC4282 addresses this problem by dividing the MOSFETs into two parallel banks with independent current limits that enforce sharing between the two banks. This method doubles the SOA of an application while using the same number and type of MOSFETs of a traditional solution, allowing the use of less expensive MOSFETs with lower SOA.